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MegaMOSTM Power MOSFET
IRFP 460 VDSS
ID(cont) RDS(on)
= 500 V = 20 A = 0.27Ω
N-Channel Enhancement Mode, HDMOSTM Family
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ±20 ±30 20 80 20 28 3.5 260 -55 ... +150
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TO-247 AD
V V V V A A A mJ V/ns Features W °C °C °C
l l l l l
G = Gate, S = Source, D = Drain, TAB = Drain D (TAB)
150 -55 ...
IFRP460 Datasheet
