IXYS IFRP460
Power MOSFET
| Part No. | IFRP460 |
|---|---|
| Datasheet | IFRP460 Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
500 500 ±20 ±30 20 80 20 28 3.5 260 -55 ... +150 TO-247 AD V V V V A A A mJ V/nsFEATURES
W °C °C °C l l l l l G = Gate, S = Source, D = Drain, TAB = Drain D (TAB) 150 -55 ... +150 Mounting torque Repetitive avalanche energy rated Fast switching times Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High Commutating dv/dt Rating 1.15/10 Nm/lb.in. 6 300 g °CAPPLICATIONS
l Switching Power Supplies l Motor controls Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 0.25 25 250 0.27 V V nA µA µA Ω VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8● VDSS VGS = 0 V VGS = 10 V, ID = 12 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 92825D (5/98) © 2000 IXYS All rights reserved 1-4 Datasheet pdf - IRFP 460 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
