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Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 250
VDSS ID (cont) RDS(on)
= 200 V = 30 A = 85 mΩ
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
Md Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V 200 V ±20 V ±30 V
30 A 120 A
30 A 19 mJ
5 V/ns
TO-247 AD
G = Gate, S = Source,
D (TAB)
D = Drain, TAB = Drain
190 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
IRFP250 Datasheet
