IXYS IRFP250
Power MOSFET
| Part No. | IRFP250 |
|---|---|
| Datasheet | IRFP250 Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
200 V 200 V ±20 V ±30 V 30 A 120 A 30 A 19 mJ 5 V/ns TO-247 AD G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain 190 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °CFEATURES
l International standard package JEDEC TO-247 AD l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA V DS = V, GS I D = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8● VDSS V =0V GS TJ = 25°C T J = 125°C V = 10 V, I = 18 A GS D Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 200 2 V 4V ±100 nA 25 µA 250 µA 0.085 Ω
APPLICATIONS
l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power density IXYS reserve...