IRFP250
Features l International standard package JEDEC TO-247 AD l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High mutating dv/dt rating l Fast switching times
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
V DS
=
V, GS
=
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8
- VDSS V =0V
TJ = 25°C
=
125°C
V = 10 V, I = 18 A GS D
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200 2
V 4V
±100 n A
25 µA 250 µA
0.085 Ω
Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers
Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power density
IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved
92602E(5/96)
1-2
IRFP 250
Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd...
