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IRFP450 Datasheet PDF

IXYS IRFP450

Standard Power MOSFET

Part No. IRFP450
Datasheet IRFP450 Download
Manufacturer
IXYS
Description Standard Power MOSFET
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IRFP450 datasheet page 1 preview

MAXIMUM RATINGS

500 V 500 V ±20 V ±30 V 14 A 56 A 14 A 19 mJ 3.5 V/ns TO-247 AD G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain 190 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °C

FEATURES

l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA V DS = V, GS I D = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
● VDSS V =0V GS TJ = 25°C T J = 125°C V = 10 V, I = 8.4 A GS D Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 500 2 V 4V ±100 nA 25 µA 250 µA 0.40 Ω

APPLICATIONS

l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (isolated mounting screw hole) l Space savings l High power d...
IRFP450 page 2 preview