Overview: MegaMOSTMFET
N-Channel Enhancement Mode IRFP 470 VDSS = 500 V
ID (cont) = 24 A RDS(on) = 0.23 Ω Symbol Test Conditions VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings
500 V 500 V ±20 V ±30 V
24 A 96 A 24 A 30 mJ
5 V/ns TO-247 AD
G = Gate, S = Source, D (TAB)
D = Drain, TAB = Drain 300 W -55 ... +150 150
-55 ... +150 °C °C °C 1.13/10 Nm/lb.in.
