IXA20I1200PB Description
IXA20I1200PB preliminary XPT IGBT Single IGBT (C) 2 I C25 = = VCES VCE(sat)typ = 33 A 1200 V 1.8 V Part number IXA20I1200PB (G) 1 (E).
IXA20I1200PB Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)