IXBF20N300 Description
+150 °C TJM 150 °C Tstg -55 ... V~ g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min.
IXBF20N300 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density