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IXBF20N300 - Bipolar MOS Transistor

Datasheet Summary

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Datasheet preview – IXBF20N300

Datasheet Details

Part number IXBF20N300
Manufacturer IXYS
File Size 1.53 MB
Description Bipolar MOS Transistor
Datasheet download datasheet IXBF20N300 Datasheet
Additional preview pages of the IXBF20N300 datasheet.

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Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 130 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 150 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C T Maximum Lead Temperature for Soldering 300 °C L 1.6 mm (0.062 in.) from Case for 10s FC VISOL Weight Mounting Force 50/60Hz, 1 Minute 20..120 / 4.5..27 4000 5 Nm/lb.in.
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