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IXBF20N300 - Bipolar MOS Transistor

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXBF20N360 Bipolar MOS Transistor
IXBF22N300 Bipolar MOS Transistor
IXBF28N300 Bipolar MOS Transistor
IXBF12N300 Monolithic Bipolar MOS Transistor
IXBF14N300 Bipolar MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 130 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 150 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C T Maximum Lead Temperature for Soldering 300 °C L 1.6 mm (0.062 in.) from Case for 10s FC VISOL Weight Mounting Force 50/60Hz, 1 Minute 20..120 / 4.5..27 4000 5 Nm/lb.in.