IXBF20N300
IXBF20N300 is Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
VGES VGEM
Continuous Transient
± 20
± 30
IC25
TC = 25°C
IC110
TC = 110°C
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 130
(RBSOA) Clamped Inductive Load
TC = 25°C
-55 ... +150
°C
°C
Tstg
-55 ... +150
°C
Maximum Lead Temperature for Soldering
°C
1.6 mm (0.062 in.) from Case for...
