IXYS IXBF20N300
Bipolar MOS Transistor
| Part No. | IXBF20N300 |
|---|---|
| Datasheet | IXBF20N300 Download |
| Manufacturer |  IXYS |
| Description | Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 130 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 150 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C T Maximum Lead Temperature for Soldering 300 °C L 1.6 mm (0.062 in.) from Case for 10s FC VISOL Weight Mounting Force 50/60Hz, 1 Minute 20..120 / 4.5..27 4000 5 Nm/lb.in. V~ g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 3000 V VGE(th) IC = 250µA, VCE = VGE 2.5 5.0 V ICES VCE = 0.8● VCES, VGE = 0V Note 2, TJ = 125°C 35 µA 1.5 mA I V = 0V, V = ± 20V GES CE GE ±100 nA VCE(sat) IC = 20A, VGE = 15V, Note 1 2.7 3.2 V TJ = 125°C 3.2 V VCES = IC110 = VCE(sat) 3000V 14A 3.2V ISOPLUS i4-PakTM 12 5 Isolated Tab 1 = Gate 2 = Emitter 5 = Collector
FEATURES
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