IXBF20N300 Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement High Power Density Switch-Mode and Resonant-Mode Power Supplies tf VCE = 1250V, RG = 10 504 ns td(on) Resistive Switching Times, T = 125°C 68 ns tr J 4,881,106 4,931,844 5,017,508 5,034,796 5,049
IXBF20N300 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density