IXBF20N360 Overview
Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) td(off) tf Resistive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 960V, RG = 10 td(on) tr
IXBF20N360 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Frequency Operation
- Low Gate Drive Requirement
- High Power Density