IXBF20N360
IXBF20N360 is Bipolar MOS Transistor manufactured by IXYS.
Preliminary Technical Information
High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor
VCES = IC110 = VCE(sat)
3600V 18A 3.4V
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
VGES VGEM
Continuous Transient
± 20
± 30
IC25
TC = 25°C
IC110
TC = 110°C
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 10
ICM = 160
(RBSOA) Clamped Inductive Load
VCES 1500
VGE = 15V, TJ = 125°C,
(SCSOA) RG = 52, VCE = 1500V, Non-Repetitive
μs
TC = 25°C
-55 ......
