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IXBF20N360 - Bipolar MOS Transistor

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Frequency Operation Advantages.
  • Low Gate Drive Requirement.
  • High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = 3000V, VGE = 0V Note 2, TJ = 125°C VCE = 0V, VGE = ± 20V VCE(SAT) IC = 20A, VGE = 15V, Note 1 TJ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = IC110 = VCE(sat)  3600V 18A 3.4V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3600 V 3600 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 45 A 18 A 220 A SSOA VGE = 15V, TVJ = 125°C, RG = 10 ICM = 160 A (RBSOA) Clamped Inductive Load VCES  1500 V TSC VGE = 15V, TJ = 125°C, (SCSOA) RG = 52, VCE = 1500V, Non-Repetitive 10 μs PC TC = 25°C 230 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ...