Part IXBF22N300
Description Bipolar MOS Transistor
Category Transistor
Manufacturer IXYS
Size 1.51 MB
IXYS

IXBF22N300 Overview

Key Specifications

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate
  • Isolated Mounting Surface
  • 4000V~ Electrical Isolation
  • High Blocking Voltage
  • High Peak Current Capability
  • Low Saturation Voltage Advantages
  • Low Gate Drive Requirement
  • High Power Density

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.