IXBF22N300 Overview
Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement High Power Density Switch-Mode and Resonant-Mode Power Supplies tf VCE = 960V, RG = 15 1820 ns td(on) Resistive Switching Times, T = 125°C 43 ns tr J Additional provisions for lead-to-lead voltage isolation are required at VCE > 1200V. IXBF22N300 Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSF
IXBF22N300 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density