Datasheet4U Logo Datasheet4U.com

IXBF22N300 - Bipolar MOS Transistor

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXBF9N140 High Voltage BIMOSFET IXYS Corporation
IXBF9N140 Power MOSFET IXYS Corporation
IXBF9N160 High Voltage BIMOSFET IXYS Corporation
IXBF9N160 Power MOSFET IXYS Corporation
IXBD4410 Half Bridge Driver Chipset IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXBF20N300 Bipolar MOS Transistor
IXBF20N360 Bipolar MOS Transistor
IXBF28N300 Bipolar MOS Transistor
IXBF12N300 Monolithic Bipolar MOS Transistor
IXBF14N300 Bipolar MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 165 A SSOA VGE = 15V, TVJ = 125°C, RG = 15 ICM = 180 A (RBSOA) Clamped Inductive Load V  1500 V CES TSC VGE = 15V, TJ = 125°C, (SCSOA) RG = 52, VCE = 1500V, Non-Repetitive 10 µs PC TC = 25°C 150 W T -55 ... +150 °C J TJM 150 °C Tstg -55 ... +150 °C T Maximum Lead Temperature for Soldering 300 °C L 1.6 mm (0.062 in.) from Case for 10s F C VISOL Weight Mounting Force 50/60Hz, 5 Seconds 20..120 / 4.5..