IXBF22N300
IXBF22N300 is Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
VGES VGEM
Continuous Transient
± 20
± 30
IC25
TC = 25°C
IC90
TC = 90°C
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 15
ICM = 180
(RBSOA) Clamped Inductive Load
V 1500
VGE = 15V, TJ = 125°C,
(SCSOA) RG = 52, VCE = 1500V, Non-Repetitive
µs
TC = 25°C
-55 ... +150
°C
°C
Tstg
-55 ......
