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IXBF22N300 - Bipolar MOS Transistor

Datasheet Summary

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Datasheet preview – IXBF22N300

Datasheet Details

Part number IXBF22N300
Manufacturer IXYS
File Size 1.51 MB
Description Bipolar MOS Transistor
Datasheet download datasheet IXBF22N300 Datasheet
Additional preview pages of the IXBF22N300 datasheet.

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Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 165 A SSOA VGE = 15V, TVJ = 125°C, RG = 15 ICM = 180 A (RBSOA) Clamped Inductive Load V  1500 V CES TSC VGE = 15V, TJ = 125°C, (SCSOA) RG = 52, VCE = 1500V, Non-Repetitive 10 µs PC TC = 25°C 150 W T -55 ... +150 °C J TJM 150 °C Tstg -55 ... +150 °C T Maximum Lead Temperature for Soldering 300 °C L 1.6 mm (0.062 in.) from Case for 10s F C VISOL Weight Mounting Force 50/60Hz, 5 Seconds 20..120 / 4.5..
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