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IXBF32N300 - Bipolar MOS Transistor

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 3000V Electrical Isolation.
  • High Blocking Voltage.
  • International Standard Package.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Full PDF Text Transcription for IXBF32N300 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXBF32N300. For precise diagrams, and layout, please refer to the original PDF.

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to ...

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F32N300 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 250 A SSOA VGE = 15V, TVJ = 125°C, RG = 10 ICM = 80 A (RBSOA) Clamped Inductive Load V  2400 V CES PC TC = 25°C 160 W T -55 ... +150 °C J TJM 150 °C T -55 ... +150 °C stg TL Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10s FC VISOL Weight Mounting Force 50/60Hz, 1 Minute 20..120 / 4.5..27 3000 5 Nm/lb.in.

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