IXBF32N300 Description
+150 °C J TJM 150 °C T -55 ... V g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min.
IXBF32N300 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 3000V Electrical Isolation
- High Blocking Voltage
- International Standard Package
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density