IXYS IXBF9N140
High Voltage BIMOSFET
| Part No. | IXBF9N140 |
|---|---|
| Datasheet | IXBF9N140 Download |
| Manufacturer |  IXYS |
| Description | High Voltage BIMOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
1400 1600 ± 20 7 4 12 0.8VCES 70 V V V A A A WFEATURES
● High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability● ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 4 0.1 500 200 60 180 40 550 44 3.6 7 8 0.1 V V V mA mA nA ns ns ns ns pF nC V 1.75 K/W
APPLICATIONS
● switched mode power supplies● DC-DC converters
● resonant converters
● lamp ballasts
● laser generators, x ray generators VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf C ies QGon VF RthJC IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.5 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V;...
