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IXBH10N170 Datasheet PDF

IXYS IXBH10N170

Bipolar MOS Transistor

Part No. IXBH10N170
Datasheet IXBH10N170 Download
Manufacturer
IXYS
Description Bipolar MOS Transistor
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IXBH10N170 datasheet page 1 preview

MAXIMUM RATINGS

1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W °C °C °C °C °C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter,

FEATURES

z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 0.10 3.0 - 0.24 TJ = 25°C TJ = 125°C V %/K 5.0 V %/K 10 100 ±100 TJ = 125°C 3.4 4.1 3.8 µA µA nA V V

APPLICATIONS

z z z BVCES VGE(th) ICES IGES VCE(sat) IC = 250 µA, VGE = 0 V Temperature Coef...
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