IXYS IXBH15N140
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
| Part No. | IXBH15N140 |
|---|---|
| Datasheet | IXBH15N140 Download |
| Manufacturer |  IXYS |
| Description | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
15N140 15N160 1400 1400 1600 1600 ±20 ±30 15 9 18 ICM = 18 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °CFEATURES
● International standard package JEDEC TO-247 AD● High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
● Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
● MOS Gate turn-on - drive simplicity
● Reverse conducting capability VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8●VCES Clamped inductive load, L = 100 mH TC = 25°C
APPLICATIONS
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● Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
● CRT deflection
● Lamp ballasts 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/10 Nm/lb.in. 6 g Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15N140 15N160 TJ = 25°C TJ = 125°C 1400 1600 4 0.1 ± 500 5.8 7.7 7.0 8 100 V V V...
