IXBH2N250 Overview
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM ICM = 6 VCE 2000 A V W °C °C °C °C °C Nm/lb.in g g G E C (Tab) TO-247 (IXBH) G C E C (Tab) G = Gate D = Drain S = Source Tab = Drain G = Gate C = Collector E = Emitter Tab = Collector Features Low Gate Drive Requirement High Power Density Switched-Mode and Resonant-Mode Power Supplies Pins: 1 - Gate 2,4 - Collector 3 - Emitter
IXBH2N250 Key Features
- High Blocking Voltage
- Integrated Anti-parallel Diode
- International Standard Packages
- Low Conduction Losses
- VCES, VGE = 0V
- Low Gate Drive Requirement
- High Power Density