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IXBH2N250

Manufacturer: IXYS (now Littelfuse)

IXBH2N250 datasheet by IXYS (now Littelfuse).

IXBH2N250 datasheet preview

IXBH2N250 Datasheet Details

Part number IXBH2N250
Datasheet IXBH2N250-IXYS.pdf
File Size 243.73 KB
Manufacturer IXYS (now Littelfuse)
Description Monolithic Bipolar MOS Transistor
IXBH2N250 page 2 IXBH2N250 page 3

IXBH2N250 Overview

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat)  2500V 2A 3.80V TO-268 (IXBT) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA.

IXBH2N250 Key Features

  • High Blocking Voltage
  • Integrated Anti-parallel Diode
  • International Standard Packages
  • Low Conduction Losses
  • VCES, VGE = 0V
  • Low Gate Drive Requirement
  • High Power Density
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IXBH2N250 Distributor

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