IXBH2N250
IXBH2N250 is Monolithic Bipolar MOS Transistor manufactured by IXYS.
Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBH2N250 IXBT2N250
VCES = IC110 = VCE(sat)
2500V 2A 3.80V
TO-268 (IXBT)
Symbol Test Conditions
Maximum Ratings
VCES VCGR VGES VGEM IC25 IC110 ICM
SSOA
(RBSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
2500 2500 ± 20 ± 30
TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 47 Clamped Inductive Load
TC = 25°C
5 2 13
ICM = 6 VCE 2000
32 -55 ... +150
150 -55 ... +150
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
1.13 /...
