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IXBH2N250 - Monolithic Bipolar MOS Transistor

Datasheet Summary

Features

  • High Blocking Voltage.
  • Integrated Anti-parallel Diode.
  • International Standard Packages.
  • Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE 3.0 VCE = 0.8.
  • VCES, VGE = 0V TJ = 125C VCE = 0V, VGE = 20V IC = 2A, VGE = 15V, Note 1 TJ = 125C 5.5 V 10 A 100 μA 100 nA 3.15 4.08.

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Datasheet Details

Part number IXBH2N250
Manufacturer IXYS
File Size 243.73 KB
Description Monolithic Bipolar MOS Transistor
Datasheet download datasheet IXBH2N250 Datasheet
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Full PDF Text Transcription

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Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat)  2500V 2A 3.80V TO-268 (IXBT) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 2500 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 47 Clamped Inductive Load TC = 25°C 5 2 13 ICM = 6 VCE  2000 32 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Torque (TO-247) 1.13 / 10 TO-247 6 TO-268 4 V V V V A A A A V W °C °C °C °C °C Nm/lb.
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