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IXBH42N250 Datasheet Bipolar Mos Transistor

Manufacturer: IXYS (now Littelfuse)

IXBH42N250 Overview

G = Gate E = Emitter Tab C = Collector Tab = Collector Features  High Blocking Voltage  International Standard Package  Anti-Parallel Diode  Low Conduction Losses  Low Gate Drive Requirement  High Power Density  Switch-Mode and Resonant-Mode Power Supplies The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

IXBH42N250 Key Features

  • High Blocking Voltage
  • International Standard Package
  • Anti-Parallel Diode
  • Low Conduction Losses
  • Low Gate Drive Requirement
  • High Power Density

IXBH42N250 Distributor