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Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH42N250
VCES = IC110 = VCE(sat)
2500V 42A 3.0V
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TSC (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 82, VCE = 1250V, Non-Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
2500
V
2500
V
± 25
V
± 35
V
104
A
42
A
400
A
ICM = 84
A
1250
V
10 500 -55 ... +150 150 -55 ... +150 300 260 1.13/10
6
μs W °C °C °C °C °C Nm/lb.
IXBH42N250 Datasheet
