IXBH42N250 Description
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N250 VCES = IC110 = VCE(sat) 2500V 42A 3.0V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test.
IXBH42N250 Key Features
- High Blocking Voltage
- International Standard Package
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density