IXBH42N250
IXBH42N250 is Bipolar MOS Transistor manufactured by IXYS.
Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
VCES = IC110 = VCE(sat)
2500V 42A 3.0V
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TSC (SCSOA)
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 82, VCE = 1250V, Non-Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
± 25
± 35
ICM =...
