IXBH42N300HV - Monolithic Bipolar MOS Transistor

Product Overview

IXYS

Part number	IXBH42N300HV
Manufacturer	IXYS
File Size	1.89 MB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBH42N300HV Datasheet
Note	This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV. Please refer to the document for exact specifications by model.
Additional preview pages of the IXBH42N300HV datasheet.

High Voltage Package.
High Blocking Voltage.
High Peak Current Capability.
Low Saturation Voltage.
FBSOA.
SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V TJ = 125°C 50 µA 250 µA I GES VCE(sat) V = 0V, V = ± 25V CE GE IC = 42A, VGE = 15V, Note 1 TJ = 125°C ±200 nA 2.5 3.0 V 3.

📁 Similar Datasheet

IXBH42N170 - Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH42N170A - Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH40N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH10N170 - Bipolar MOS Transistor (IXYS Corporation)
IXBH15N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH16N170A - Bipolar MOS Transistor (IXYS Corporation)
IXBH9N140G - Bipolar MOS Transistor (IXYS Corporation)

Other Datasheets by IXYS

Published: Feb 10, 2025 |