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High Voltage, BiMOSFETTM IXBT42N300HV
Monolithic Bipolar MOS Transistor
IXBH42N300HV
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
3000
V
3000
V
VGES VGEM
Continuous Transient
± 25
V
± 35
V
IC25
TC = 25°C
IC110
TC = 110°C
ICM
TC = 25°C, 1ms
104
A
42
A
400
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 84
A
(RBSOA) Clamped Inductive Load
1500
V
TSC (SCSOA)
PC
TJ TJM T
stg
T L
TSOLD
Md
Weight
VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive
TC = 25°C
10
500 -55 ... +150
150 -55 ... +150
Maximum Lead Temperature for Soldering
300
Plastic Body for 10s
260
Mounting Torque (TO-247HV)
1.13/10
TO-268HV
4
TO-247HV
6
µs
W °C °C °C °C °C Nm/lb.in
g g
VCES = IC110 = VCE(sat)
3000V 42A 3.
IXBH42N300HV Datasheet
