IXBH42N300HV Description
High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C.
IXBH42N300HV Key Features
- High Voltage Package
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- VCES, VGE = 0V
- Low Gate Drive Requirement
- High Power Density