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IXBH42N300HV - Monolithic Bipolar MOS Transistor

Download the IXBH42N300HV datasheet PDF. This datasheet also covers the IXBT42N300HV variant, as both devices belong to the same monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Voltage Package.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage.
  • FBSOA.
  • SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V TJ = 125°C 50 µA 250 µA I GES VCE(sat) V = 0V, V = ± 25V CE GE IC = 42A, VGE = 15V, Note 1 TJ = 125°C ±200 nA 2.5 3.0 V 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBT42N300HV-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 104 A 42 A 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 84 A (RBSOA) Clamped Inductive Load 1500 V TSC (SCSOA) PC TJ TJM T stg T L TSOLD Md Weight VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive TC = 25°C 10 500 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 Mounting Torque (TO-247HV) 1.13/10 TO-268HV 4 TO-247HV 6 µs W °C °C °C °C °C Nm/lb.in g g VCES = IC110 = VCE(sat)  3000V 42A 3.