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IXBH42N300HV Datasheet Monolithic Bipolar Mos Transistor

Manufacturer: IXYS (now Littelfuse)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IXBH42N300HV Overview

High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C.

IXBH42N300HV Key Features

  • High Voltage Package
  • High Blocking Voltage
  • High Peak Current Capability
  • Low Saturation Voltage
  • VCES, VGE = 0V
  • Low Gate Drive Requirement
  • High Power Density

IXBH42N300HV Distributor