Overview: High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Preliminary data sheet C TO-220 AB (IXBP) G C E C (TAB) G TO-247 AD (IXBH) E G C C (TAB) E
A = Anode, C = Cathode , TAB = Cathode IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 5.7 A 3.5 A 6 0.8VCES
68 A W Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 3 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 0.3 mA; V = V
C GE CE
VGE = 0 V; VCE = VCES; TVJ = 25°C VCE = 0.8VCES; TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 960 V; IC = 3 A VGE = 10/0 V; RG = 47 Ω 4.9 7.2 V 5.6 V
3.5 5.5 V
150 µA 50 µA
100 nA
140 ns 200 ns 120 ns
70 ns V = 25 V; V = 0 V; f = 1 MHz CE GE
VCE = 600V; VGE = 10 V; IC = 3 A
(reverse conduction); IF = 3 A 325 pF 26 nC
6V
1.
