IXBK55N300 Description
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to.
IXBK55N300 Key Features
- High Blocking Voltage
- International Standard Packages
- Low Conduction Losses
- High Current Handling Capability
- MOS Gate Turn-On
- Drive Simplicity
- Easy to Mount
- Space Savings
- High Power Density