IXBK75N170A Description
BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A VCES = I = C90 VCE(sat) t = fi(typ) 1700V 65A 6.00V 60ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ.
IXBK75N170A Key Features
- International Standard Packages
- High Blocking Voltage
- Fast Switching
- High Current Handling Capability
- Anti-Parallel Diode
- High Power Density
- Low Gate Drive Requirement