IXBL60N360 Description
+150 °C TJM 150 °C Tstg -55 ... 3600 V 3.0 5.0 V 25 μA 125 μA ±200 nA 2.8 3.4 V 3.4 V ISOPLUS i5-PakTM GE C Isolated Tab G = Gate E = Emitter C = Collector.
IXBL60N360 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Frequency Operation
- Low Gate Drive Requirement
- High Power Density