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High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G IXBH 5N160 G
IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns
Preliminary data sheet
C TO-220 AB (IXBP)
G
C E
C (TAB)
G
TO-247 AD (IXBH)
E G C C (TAB) E
A = Anode, C = Cathode , TAB = Cathode
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES td(on) t
r
td(off) tf C
ies
QGon VF RthJC
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C
VGE
=
10/0
V;
R G
=
47
Ω;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
1600
V
± 20
V
5.7 A 3.5 A
6 0.8VCES
68
A W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 3 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 0.
IXBP5N160G Datasheet
