IXBP5N160G Description
TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 5.7 A 3.5 A 6 0.8VCES 68 A W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C I = 0.3 mA;.
IXBP5N160G Key Features
- High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- MOSFET patible control 10 V turn on gate voltage
- fast switching for high frequency operation
- reverse conduction capability
- industry standard package
- TO-220AB
- TO-247AD epoxy meets UL94V-0