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IXBT2N250 Datasheet

Manufacturer: IXYS (now Littelfuse)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IXBT2N250 datasheet preview

Datasheet Details

Part number IXBT2N250
Datasheet IXBT2N250 IXBH2N250 Datasheet (PDF)
File Size 243.73 KB
Manufacturer IXYS (now Littelfuse)
Description Monolithic Bipolar MOS Transistor
IXBT2N250 page 2 IXBT2N250 page 3

IXBT2N250 Overview

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat)  2500V 2A 3.80V TO-268 (IXBT) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA.

IXBT2N250 Key Features

  • High Blocking Voltage
  • Integrated Anti-parallel Diode
  • International Standard Packages
  • Low Conduction Losses
  • VCES, VGE = 0V
  • Low Gate Drive Requirement
  • High Power Density
IXYS (now Littelfuse) logo - Manufacturer

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IXBT2N250 Distributor

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