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IXBT32N300 Datasheet Bipolar MOS Transistor

Manufacturer: IXYS (now Littelfuse)

Download the IXBT32N300 datasheet PDF. This datasheet also includes the IXBH32N300 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXBH32N300-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat) ≤ 3000V 32A 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 80 A 32 A 280 A ICM = 80 A VCES ≤ 2400 V 400 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

  • z High Blocking Voltage z International Standard Packages z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density.

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