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IXBT42N300HV - Monolithic Bipolar MOS Transistor

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IXYS

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IXBT42N300HV Monolithic Bipolar MOS Transistor by IXYS - Datasheet Preview — Datasheet preview – IXBT42N300HV

Datasheet Details

Part number	IXBT42N300HV
Manufacturer	IXYS
File Size	1.89 MB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBT42N300HV Datasheet
Additional preview pages of the IXBT42N300HV datasheet.

Product details

Features

High Voltage Package.
High Blocking Voltage.
High Peak Current Capability.
Low Saturation Voltage.
FBSOA.
SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V TJ = 125°C 50 µA 250 µA I GES VCE(sat) V = 0V, V = ± 25V CE GE IC = 42A, VGE = 15V, Note 1 TJ = 125°C ±200 nA 2.5 3.0 V 3.

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Published: Feb 10, 2025 |