IXBT6N170 Description
+150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in.
IXBT6N170 is BIMOSFET Monolithic Bipolar MOS Transistor manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXBT12N300 | Bipolar MOS Transistor |
| IXBT12N300HV | Bipolar MOS Transistor |
| IXBT14N300HV | Bipolar MOS Transistor |
| IXBT16N170 | BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBT16N170AHV | Bipolar MOS Transistor |
+150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in.