Overview: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 24Ω Clamped inductive load TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 12 A 6A
36 A ICM = 16 VCES ≤ 1350
75 A V
W -55 ... +150 150
-55 ... +150 °C °C °C 300 260
1.13/10 °C °C
Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES IC = 250μA, VCE = VGE VGE(th) sICES
IGES VCE(sat) IC = 250μA, VCE = VGE VCE = 0.8 • VCES VGE = 0V TJ = 125°C VCE = 0V, VGE = ±20V IC = 6A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1700 V 2.5 5.5 V 10 μA 100 μA ±100 nA 2.84 3.40 3.
