Datasheet Details
| Part number | IXBX25N250 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 172.75 KB |
| Description | Bipolar MOS Transistor |
| Download | IXBX25N250 Download (PDF) |
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| Part number | IXBX25N250 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 172.75 KB |
| Description | Bipolar MOS Transistor |
| Download | IXBX25N250 Download (PDF) |
|
|
|
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBX25N250 VCES = IC90 = VCE(sat) ≤ 2500V 25A 3.3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 4.7Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10 seconds Mounting Force Maximum Ratings 2500 V 2500 V ± 20 V ± 30 V 55 A 25 A 180 A ICM = 80 A VCES ≤ 2000 V 300 W -55 ...
+150 °C 150 °C -55 ...
+150 °C 300 260 20..120 / 4.5..27 °C °C N/lb.
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