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IXBX64N250 Datasheet Monolithic Bipolar MOS Transistor

Manufacturer: IXYS (now Littelfuse)

Download the IXBX64N250 datasheet PDF. This datasheet also includes the IXBK64N250 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXBK64N250-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (IXBK) Symbol VCES VCGR VGES V GEM I C25 I LRMS IC100 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg T L Md F C Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 V 2500 V ±25 V ±35 V T C = 25C (Chip Capability) Lead Current Limit, RMS 156 A 120 A TC = 110°C TC = 25°C, 1ms 64 A 800 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 160 A Clamped Inductive Load V < 0.8 • V CE CES VGE = 15V, TJ = 125°C, RG = 5, VCE = 1250V, Non-Repetitive 10 µs TC = 25°C 735 W -55 ...

+150 °C 150 °C -55 ...

+150 °C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (TO-264 ) Mounting Force (PLUS247) 1.13/10 20..120/4.5..27 Nm/lb.in.

Key Features

  • High Blocking Voltage.
  • Low Switching Losses.
  • High Current Handling Capability.
  • Anti-Parallel Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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