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IXBX64N250 - Monolithic Bipolar MOS Transistor

This page provides the datasheet information for the IXBX64N250, a member of the IXBK64N250 Monolithic Bipolar MOS Transistor family.

Datasheet Summary

Features

  • High Blocking Voltage.
  • Low Switching Losses.
  • High Current Handling Capability.
  • Anti-Parallel Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Datasheet preview – IXBX64N250

Datasheet Details

Part number IXBX64N250
Manufacturer IXYS
File Size 2.07 MB
Description Monolithic Bipolar MOS Transistor
Datasheet download datasheet IXBX64N250 Datasheet
Additional preview pages of the IXBX64N250 datasheet.

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Full PDF Text Transcription

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (IXBK) Symbol VCES VCGR VGES V GEM I C25 I LRMS IC100 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg T L Md F C Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 V 2500 V ±25 V ±35 V T C = 25C (Chip Capability) Lead Current Limit, RMS 156 A 120 A TC = 110°C TC = 25°C, 1ms 64 A 800 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 160 A Clamped Inductive Load V < 0.8 • V CE CES VGE = 15V, TJ = 125°C, RG = 5, VCE = 1250V, Non-Repetitive 10 µs TC = 25°C 735 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.
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