IXCY01N90E Description
+150 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 3.00 g 0.35 g Characteristic Values Min. 900 V 2.5 5.0 V ±50 nA 10 μA 80 Ω 125 175 mA TO-252 AA (IXCY) G S D (Tab) TO-220 (IXCP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain.
IXCY01N90E Key Features
- Rugged HDMOSTM Process
- Stable Peak Drain Current Limit
- High Voltage Current Regulator
- International Standard Packages