IXDN630 Overview
The IXDD630/IXDI630/IXDN630 high-speed gate drivers are especially well suited for driving the latest IXYS power MOSFETs and IGBTs. The IXD_630 output can source and sink 30A of peak current while producing voltage rise and fall times of less than 20ns. Internal circuitry eliminates cross conduction and current "shoot-through," and the driver is virtually immune to latch up.
IXDN630 Key Features
- 30A Peak Source/Sink Drive Current
- High Operating Voltage Capability: 35V
- 40°C to +125°C Extended Operating Temperature
- Under-Voltage Lockout Protection
- Logic Input Withstands Negative Swing of up to 5V
- Fast Rise and Fall Times: < 20ns
- Low Propagation Delay Time
- Low 10A Supply Current
- Low Output Impedance