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IXFA130N15X3 - Power MOSFET

Key Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA130N15X3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL dT/dt TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 130 120 230 65 1.2 50 390 -55 ... +150 150 -55 ... +150 A A A A J V/ns W C C C Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s 300 °C 50 °C/min 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.