Overview: X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA14N85XHV IXFP14N85X IXFH14N85X VDSS =
ID25 = RDS(on) 850V 14A 550m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C 14 35
7 500
50 460 -55 ... +150 150 -55 ... +150 A A
A mJ V/ns
W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263HV) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263HV TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.
