Datasheet4U Logo Datasheet4U.com

IXFA20N85XHV - Power MOSFET

Download the IXFA20N85XHV datasheet PDF. This datasheet also covers the IXFA20N85XHV-1 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Package.
  • High Voltage Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA20N85XHV-1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA20N85XHV VDSS = ID25 =  RDS(on) 850V 20A 330m TO-263HV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL dT/dt TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 20 50 10 800 50 540 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s 300 °C 50 °C/min 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.