Overview: Preliminary Technical Information X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA24N60X IXFP24N60X IXFQ24N60X IXFH24N60X
TO-263 AA (IXFA) VDSS = ID25 = RDS(on) 600V 24A 175m TO-220AB (IXFP) G S
D (Tab) GD S TO-3P (IXFQ) D (Tab) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD FMCd Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient 600 V 600 V
30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C 24 48
8 500
50
400
-55 ... +150 150
-55 ... +150 A A
A mJ
V/ns
W
C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 2.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 600 V 2.5 4.
