IXFA34N65X3 - N-Channel Enhancement Mode Power MOSFET

Features

International Standard Package.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

Datasheet Details

Part number	IXFA34N65X3
Manufacturer	IXYS
File Size	588.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	IXFA34N65X3 Datasheet
Additional preview pages of the IXFA34N65X3 datasheet.

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Full PDF Text Transcription

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X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA34N65X3 D G S Symbol VDSS V DGR V GSS VGSM ID25 IDM I A E AS dv/dt P D TJ T JM Tstg T SOLD F C Weight Test Conditions TJ = 25C to 150C T J = 25C to 150C, R GS = 1M Continuous Transient Maximum Ratings 650 V 650 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM T C = 25C T C = 25C IS  IDM, VDD  VDSS, TJ  150°C T C = 25C 34 48 5 750 50 446 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Plastic Body for 10s 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BV DSS V = 0V, I = 1mA GS D VGS(th) VDS = VGS, ID = 2.

Published: Jul 20, 2025 |