IXYS IXFB100N50Q3
HiperFET Power MOSFET
| Part No. | IXFB100N50Q3 |
|---|---|
| Datasheet | IXFB100N50Q3 Download |
| Manufacturer |  IXYS |
| Description | HiperFET Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
500 500 ±30 ±40 100 300 100 5 50 1560 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb. g Advantages z z z z z z z G D S Tab D = Drain Tab = Drain G = Gate S = SourceFEATURES
Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space SavingsAPPLICATIONS
z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.5 6.5 V V z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls ±200 nA 50 μA 2.5 mA 49 mΩ VGS = 10V, ID = 0.5● ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved DS100309(03/11) IXFB100N50Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on...
