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IXFB44N100P Datasheet N-channel Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB44N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque Maximum Ratings 1000 V 1000 V ± 30 V ± 40 V 44 A 110 A 22 A 2 J 15 V/ns 1250 W -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 °C °C °C °C °C N/lb.

Key Features

  • z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Plus 264TM package for clip or spring mounting z Space savings z High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max.

IXFB44N100P Distributor