Overview: HiPerFETTM Power MOSFETs
Q-Class IXFB 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
Preliminary Data Sheet VDSS = 550 V ID25 = 72 A
RDS(on)= 72 mΩ trr ≤ 250 ns Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Fc Weight
Symbol
VDSS VGS(th) IGSS
IDSS
RDS(on) Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TTCC = = 25°C, 25°C pulse width limited by TJM TTCC = 25°C = 25°C ITSJ ≤ ≤ I1D5M0, °dCi/d, tR≤G 100 =2 A/µs, Ω VDD ≤ VDSS TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting Force Maximum Ratings 550 V 550 V ±30 V ±40 V 72 A 284 A 72 A 60 mJ 5.0 J 20 V/ns 890 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 30...120/7.5...27 N/lb 10 g Test Conditions VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V VNGoSt=e 10 1 V, ID = 0.5 • ID25 Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 550 V 2.5 5.
