Datasheet4U Logo Datasheet4U.com

IXFB72N55Q2 - Power MOSFET

Features

  • z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier.

📥 Download Datasheet

Datasheet preview – IXFB72N55Q2

Datasheet Details

Part number IXFB72N55Q2
Manufacturer IXYS
File Size 551.38 KB
Description Power MOSFET
Datasheet download datasheet IXFB72N55Q2 Datasheet
Additional preview pages of the IXFB72N55Q2 datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
HiPerFETTM Power MOSFETs Q-Class IXFB 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet VDSS = 550 V ID25 = 72 A RDS(on)= 72 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TTCC = = 25°C, 25°C pulse width limited by TJM TTCC = 25°C = 25°C ITSJ ≤ ≤ I1D5M0, °dCi/d, tR≤G 100 =2 A/µs, Ω VDD ≤ VDSS TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting Force Maximum Ratings 550 V 550 V ±30 V ±40 V 72 A 284 A 72 A 60 mJ 5.0 J 20 V/ns 890 W -55 ... +150 °C 150 °C -55 ...
Published: |