IXFC13N50 Datasheet PDF

MAXIMUM RATINGS

500 500 ± 20 ± 30 12 48 13 18 5 140 -55 ... +150 150 -55 ... +150 300 3 V V V V A A A mJ V/ns W °C °C °C °C g z z z z G D S Isolated back surface* G = Gate S = Source

FEATURES

z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated FastintrinsicRectifier

APPLICATIONS

z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA µA mA Ω z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
● VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 Advantages z z z z Easy assembly: no screws or...