IXYS IXFC80N10
HiPerFET MOSFET
| Part No. | IXFC80N10 |
|---|---|
| Datasheet | IXFC80N10 Download |
| Manufacturer |  IXYS |
| Description | HiPerFET MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
100 100 ± 20 ± 30 80 55 320 80 50 2.5 5 230 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C ISOPLUS 220TM G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain,FEATURES
l l l l l 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS, leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 V~ g l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifierAPPLICATIONS
l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C V V l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 l DC-DC converters Batterychargers Switc...