IXYS IXFE180N10
Power MOSFET
| Part No. | IXFE180N10 |
|---|---|
| Datasheet | IXFE180N10 Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
100 100 ± 20 ± 30 176 100 720 180 60 3 5 500 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C °C V~ V~ ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin SourceFEATURES
● Conforms to SOT-227B outline● Encapsulating epoxy meets UL 94 V-0, flammability classification
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low package inductance Mounting torque Terminal connection torque 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. 19 g
● Fast intrinsic Rectifier
APPLICATIONS
● DC-DC converters Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= ±20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = IT Note 2 Min. 100 2 Characteristic Values Typ. Max. V 4 ± 100 V nA µA mA mΩ● Synchronous rectification
● Battery chargers
● Switched-mode and...
