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IXFE73N30Q - Power MOSFET

Key Features

  • Conforms to SOT-227B outline.
  • Low RDS (on).

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Full PDF Text Transcription for IXFE73N30Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFE73N30Q. For precise diagrams, and layout, please refer to the original PDF.

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFE 73N30Q VDSS = ID25 = = RDS(on) 300 V 66 A 46 mΩ trr ≤ 250 ns Prelimin...

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73N30Q VDSS = ID25 = = RDS(on) 300 V 66 A 46 mΩ trr ≤ 250 ns Preliminary data sheet Symbol VDSS VDGR E V GS VGSM T ID25 IDM IAR E EAR EAS dv/dt L PD T J O T JM T stg VISOL S M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note1 TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω TC = 25°C 50/60 Hz, RMS t = 1 min IISOL≤ 1 mA t=1s Mounting torque Terminal connection torque Maximum Ratings 300 V 300 V ±20 V ±30 V 66 A 292 A 73 A 60 mJ 2.5 J 5 V/ns 400 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.5/13 19 W °C °C °C V~ V~ Nm

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