IXFH100N25P Description
PolarHT HiPerFET Power MOSFET For Plasma Display Applications TM IXFH 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ ≤ 200 ns trr .. Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A mJ J V/ns Advantages W °C °C °C °C z z.
IXFH100N25P Key Features
- easy to drive and to protect
- Gate 3
- Source 2
- Drain Tab
IXFH100N25P Applications
- easy to drive and to protect