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IXFH100N25P - PolarHT HiPerFET Power MOSFET

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/10 Nm/lb. in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±100 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHT HiPerFET Power MOSFET For Plasma Display Applications TM IXFH 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 mΩ ≤ 200 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings TO-247 AD (IXTH) 250 250 ± 20 ± 30 100 75 250 60 60 2.0 10 600 -55 ... +150 150 -55 ...