IXFH160N15T2
IXFH160N15T2 is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS =
ID25
=
≤ RDS(on) trr
≤
150V 160A 9.0mΩ 160ns
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque
Maximum Ratings
± 20
± 30
V/ns
-55 ... +175
°C
°C
-55...
