IXYS IXFH20N60
Power MOSFET
| Part No. | IXFH20N60 |
|---|---|
| Datasheet | IXFH20N60 Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 600 ±20 ±30 15 20 60 80 15 20 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, G D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 gFEATURES
● International standard packages● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low package inductance - easy to drive and to protect
● Fast intrinsic Rectifier
APPLICATIONS
● DC-DC converters● Synchronous rectification
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control
● Temperature and lighting controls
● Low voltage relays Advantages
● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
● Space savings
● High power density 91526E (4/99) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
