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IXFH20N85X - Power MOSFET

Download the IXFH20N85X datasheet PDF. This datasheet also covers the IXFA20N85XHV variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXFA20N85XHV-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

X-Class HiPerFETTM Power MOSFET IXFP20N85X IXFH20N85X N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =  RDS(on) 850V 20A 330m TO-220 (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 850 V 850 V 30 V 40 V 20 A 50 A 10 A 800 mJ 50 V/ns 540 W -55 ...

+150 C 150 C -55 ...

+150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 2.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • International Standard Packages.
  • High Voltage Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXFH20N85X N-Channel MOSFET INCHANGE

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