IXYS IXFH28N50F
HiPerRF Power MOSFETs
| Part No. | IXFH28N50F |
|---|---|
| Datasheet | IXFH28N50F Download |
| Manufacturer |  IXYS |
| Description | HiPerRF Power MOSFETs |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TAB) 500 500 ± 20 ± 30 28 112 28 35 1.5 10 315 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) TL 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 300 Md Weight 1.13/10 Nm/lb.in. 6 4 g gFEATURES
l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifierAPPLICATIONS
l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 4.0 V V VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS...