Overview: PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V= DSS ID25 = ≤ RDS(on) trr ≤ 500 V 30 A 200 mΩ 200 ns TO-247 AD (IXFH) Symbol
VDSS VDGR
VGSS V
GSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
M d
FC
Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω
TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD)
PLUS220, PLUS220SMD TO-268 TO-247 Maximum Ratings 500 V 500 V ±30 V ±40 V TO-268 (IXFT) 30 A 75 A 30 A 40 mJ 1.2 J G S 10 V/ns PLUS220 (IXFV) D (TAB) D (TAB) 460 W -55 ... +150 150
-55 ... +150
300 260 °C °C GDS °C D (TAB) °C PLUS220 SMD(IXFV..S) °C 1.13/10 Nm/lb.in 11 65/2.5 15 N/lb. 4 g 5 g 6 g G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Symbol
BVDSS VGS(th) IGSS I
DSS
RDS(on) Test Conditions (TJ = 25° C, unless otherwise specified)
VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 500 V VDS = VGS, ID = 4 mA 3.0 5.0 V VGS = ±30 V, VDS = 0 V ±100 nA V =V DS DSS VGS = 0 V TJ = 125° C 25 µA 750 µA VGS = 10 V, ID = 0.
