IXFH34N50P3 - Power MOSFET

IXYS (now Littelfuse)

Download the IXFH34N50P3 datasheet PDF. This datasheet also covers the IXFQ34N50P3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Fast Intrinsic Rectifier.
Avalanche Rated.
Low RDS(ON) and QG.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

📥 Download Datasheet

IXFH34N50P3 power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFQ34N50P3-IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFH34N50P3
Manufacturer	IXYS (now Littelfuse)
File Size	171.18 KB
Description	Power MOSFET
Datasheet	IXFH34N50P3 Datasheet

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXFH34N65X2	Power MOSFET
IXFH34N65X3	N-Channel MOSFET
IXFH30N40Q	Power MOSFET
IXFH30N50	HiPerFET Power MOSFETs
IXFH30N50	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Polar3TM HiperFETTM Power MOSFET IXFQ34N50P3 IXFH34N50P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on)  500V 34A 180m TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 500 V 500 V  30 V  40 V 34 A 85 A 17 A 400 mJ 35 V/ns 695 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 5.5 6.0 Nm/lb.in.