Overview: HiPerFETTM Power MOSFETs
Q-Class Not for New Designs
IXFH40N30Q IXFT40N30Q VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 300 300
± 20 ± 30
40 160
40 1.0 V V
V V
A A
A J 5
300
-55 ... +150 150
-55 ... +150
300 260
1.13 / 10 4 6 V/ns
W
°C °C °C
°C °C
Nm/lb.in.
g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max.
300 V
2.0 4.
