IXFH75N10Q Description
+150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. 100 V VGS(th) VDS = VGS, ID = 4 mA 2.0 4 V IGSS.
- Part: IXFH75N10Q
- Manufacturer: IXYS
- Size: 154.75 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXFH75N10 | Power MOSFET |