The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Advanced Technical Information
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances
IXFH 75N10Q IXFT 75N10Q
VDSS ID25
RDS(on)
= 100 V = 75 A = 20 mW
trr £ 200ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
TO-247 AD TO-268
Maximum Ratings 100 V 100 V
±20 V ±30 V
75 A 300 A
75 A
30 mJ 1.5 J
5 V/ns
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C
1.13/10 Nm/lb.in.
IXFH75N10Q Datasheet
