Datasheet4U Logo Datasheet4U.com

IXFH7N100P - Power MOSFET

This page provides the datasheet information for the IXFH7N100P, a member of the IXFP7N100P Power MOSFET family.

Features

  • International Standard Packages.
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low R and Q DS(ON) G.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Datasheet preview – IXFH7N100P

Datasheet Details

Part number IXFH7N100P
Manufacturer IXYS
File Size 343.44 KB
Description Power MOSFET
Datasheet download datasheet IXFH7N100P Datasheet
Additional preview pages of the IXFH7N100P datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 7 18 7 300 10 300 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
Published: |